Gallium Nitride is one kind of wide-gap compound semiconductors.

CAS No.25617-97-4, EINECS Number 247-129-0
Mitsubishi Chemical's Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate.  It is made with original HVPE method and wafer processing technology, which  has been originally developed for many years.  The features are high crystalline, good  uniformity, and superior surface quality.

GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green)
Furthermore, development has progressed  for power and high frequency electronic device applications.
 In order to achieve higher quality and  productivity, we have been developing the Liquid Phase growth process called  SCAAT(SuperCritical Acidic Ammonia Technology) method.

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Mitsubishi Chemical's Epitaxial Wafers for Light Emitting Diode are  high-quality, high-value-added compound semiconductor substrates.  The LED layered structures are epitaxially grown on a Gallium Arsenide or Gallium Phosphide substrate by HVPE( Hydride Vapor Phase Epitaxy) or LPE( Liquid Phase Epitaxy).
The features are high intensity and highly uniform luminescent properties.
Those substrates are used to make various LED's (infrared, red, yellow, and green).

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