Gallium Nitride Dept.
The Gallium Nitride Dept. has more than thirty years experience in LED materials business such as GaAs (Gallium Arsenide) and GaP (Gallium Phosphide). We have been developing new materials for LED lightings and displays. Among them, we have launched GaN(Gallium Nitride) substrate production recently.
Gallium Nitride is one kind of wide-gap compound semiconductors. CAS No.25617-97-4, EINECS Number 247-129-0 Mitsubishi Chemical's Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for many years. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications. In order to achieve higher quality and productivity, we have been developing the Liquid Phase growth process called SCAAT(SuperCritical Acidic Ammonia Technology) method.
Epitaxial Wafer for Light Emitting Diode
Mitsubishi Chemical's Epitaxial Wafers for Light Emitting Diode are high-quality, high-value-added compound semiconductor substrates. The LED layered structures are epitaxially grown on a Gallium Arsenide or Gallium Phosphide substrate by HVPE( Hydride Vapor Phase Epitaxy) or LPE( Liquid Phase Epitaxy). The features are high intensity and highly uniform luminescent properties. Those substrates are used to make various LED's (infrared, red, yellow, and green).